Tuneable unipolar lasers

ABSTRACT

A unipolar semiconductor laser is provided in which an active region is sandwiched in a guiding structure between an upper and lower cladding layer, the lower cladding layer being situated on a semiconducting substrate. The unipolar semiconductor laser comprises a raised ridge section running from end to end between end mirrors defining the laser cavity. The ridge section aids in optical and electrical confinement. The ridge waveguide is divided in a plurality of cavity segments (at least two). Lattice structures can be arranged on and/or adjacent to these cavity segments. Each cavity segment is in contact with upper metallic electrodes. A metallic electrode coupled to the bottom surface of the semiconducting substrate facilitates current injection through the device.

CLAIM TO PRIORITY

This application is a divisional of, and claims priority from, our U.S. application entitled “Tuneable Unipolar Lasers” filed Jun. 10, 2004 and assigned Ser. No. 10/865,036, issuing as U.S. Pat. No. 7,301,977 on Nov. 27, 2007, the entire contents of which are incorporated herein for all purposes.

FIELD OF THE INVENTION

The present invention relates to unipolar lasers with a semiconductor substrate, a laser structure containing an active region sandwiched in a waveguide structure and arranged on the semiconductor substrate, a waveguide ridge divided into a plurality of cavity segments (at least two) and separate contacts to each of the cavity segments. Each of the cavity segments of the waveguide ridge can carry a specially designed lattice structure at a distance from the active region. The present invention further relates to a technological process for the production of such a widely tunable unipolar laser.

BACKGROUND OF THE INVENTION

Conventional semiconductor lasers are based on band-band transitions within a p-n-junction and are inherently limited in the maximal attainable emission wavelength. In contrast, for unipolar laser devices, i.e., lasers based on the injection of one type of carrier, no comparable long wavelength limit exists. The operating principle of a unipolar laser is based on the possibility of amplifying an electromagnetic wave in a semiconductor structure containing a superlattice, as described in 1971 by Kazarinov and Suris. Kazarinov and Suris disclose a coherent IR source based on intersubband transitions in quantum wells and tunnelling injection cascading through many identical stages for multiple photon generation. First laser operation based on this principle was demonstrated in 1994 by scientists working at Bell Labs who pointed out an inherent characteristic of unipolar lasers. That is, a unipolar laser comprises a multilayer semiconductor structure containing doped semiconducting material of only a single conductivity type, thereby producing laser emissions with only one type of carrier (e.g. U.S. Pat. No. 5,457,709, col. 2, lines 24-32, and U.S. Pat. No. 5,509,025, col. 2, lines 29-37).

A unipolar laser consists of an active region sandwiched in an optical waveguide structure. The active region consists of a plurality of nominal identical stages for multiple photon generation and is designed to emit at a wavelength λ. The optical waveguide structure consists of lower and upper guiding layers with relatively high refractive index sandwiched between lower and upper cladding layers with relatively small refractive index. The active region is sandwiched between the lower and upper guiding layers. The generated optical radiation is thereby guided within the higher-index guiding layers.

For many applications, for example sensing or spectroscopy, single-mode laser emission is very advantageous. In a DFB (distributed feedback) unipolar laser, only laser radiation with one specific longitudinal laser mode is emitted while other modes are suppressed by a periodic lattice. The standard DFB unipolar laser uses a periodic lattice with a certain period in order to achieve laser emission at the desired fixed wavelength. Tuning of the emission wavelength in conventional DFB unipolar lasers is possible by variation of the injection current or the temperature of the laser, but typically only over a very limited spectral range. Thus, conventional DFB unipolar lasers exhibit a narrow linewidth as advantageous for sensing and other applications, but the wavelength tunability is limited.

For many applications, such as spectroscopy, a broader wavelength tuning range would be desirable. Pursuant to some embodiments of the present invention, a wider tuning range is achieved by using unipolar lasers that include several cavity segments. In some embodiments, each of the segments includes a specially designed lattice structure. In some embodiments, one or more of the cavity segments are fabricated without gratings. Typically, each cavity segment is provided with a contact, which allows for control of the drive current of this cavity segment independent from that of the other segments. Tuning of the device is typically accomplished by changing the ratio of the currents through the cavity segments of the laser and by changing the device temperature. In addition to tunable unipolar laser devices, the present invention also relates to materials and methods of fabricating such devices.

SUMMARY OF THE INVENTION

A primary objective of the present invention is to produce a tuneable unipolar laser, especially single-mode laser, including materials and methods of fabricating such lasers.

According to some embodiments of the present invention, a unipolar semiconductor laser is described on a semiconductor substrate. These embodiments include a unipolar active region arranged on the semiconductor substrate. This active region is sandwiched in a waveguide structure. A waveguide ridge is arranged at a distance from the active region. The waveguide ridge is divided into a plurality of individual cavity segments (at least two) with certain coupling between these segments. This coupling between cavities can be realized in various ways. In some embodiments, an air gap between the different cavity sections can be used. The extent of this air gap influences the amount of coupling. In the limiting case of no air gap, maximum coupling between different cavity sections is achieved. However, other approaches can be used to achieve optimal or near-optimal coupling between cavities, including but not limited to, coupling between sections using periodic refractive index patterns. For example, photonic crystal structures including two dimensional hole patterns or one dimensional slit patterns in the semiconductor can be used to achieve the desired coupling, typically optimal or near-optimal, between different cavities.

Each cavity segment of the waveguide ridge is typically in contact with an upper metallic electrode. A metallic electrode coupled to the bottom surface of the semiconducting substrate facilitates current injection through the individual cavity sections of the device. “Cavity segment,” “cavity section,” “laser segment” are used herein synonymously to denote a portion of the waveguide ridge and the terms are equivalent.

For each segment a “mode comb” having user-defined energy spacings between the modes is defined by the allowed longitudinal modes within the gain region of the laser structure. Different principles for selecting a set of longitudinal modes may be used in each of these segments. For example:

-   -   a) By choosing a well-defined length for each segment,         longitudinal modes are defined. In this case the length of the         segment is proportional to an integer number of half wavelengths         of the electromagnetic radiation.     -   b) Alternatively, by using a lattice structure located atop of         the waveguide ridge or located laterally with respect to the         waveguide ridge, a set of longitudinal modes can be selected.         The lattice structure is formed at a distance from the active         region. The position, dimension and geometric shape of the         lattice structure can be used to define the amount of coupling         with the guided optical radiation. By a periodic variation of         the real and/or imaginary part of the refractive index, a         specific longitudinal laser mode can be selected. In contrast to         a standard distributed feedback laser lattice which is based on         a single lattice period, the lattice structures formed along         different cavity sections of the ridge waveguide as described         herein typically include a superstructure composed of several         lattices with different lattice periods to achieve multiple         reflectivity, absorption and/or gain peaks. For an absorbing         lattice, multiple minima of the absorption are provided. By         changing the amplitudes and periods of the constituent lattices,         a flexible control over the spectral position and the magnitude         of the dips in the absorption of the lattice can be obtained.         The lattice structures can also include an optional phase shift         region in the lattice structure.

In all these approaches to longitudinal mode selection for each segment, a “mode comb” is defined by the allowed longitudinal modes within the gain region of the laser structure. Mixed structures in which, for example, one segment includes a lattice structure whereas one or several others do not contain lattice structures, are also possible sources of tuneable single mode emission. In such tuneable unipolar single-mode lasers, single longitudinal modes are selected by the overlap of the longitudinal modes of the individual segments. The energy spacing between the longitudinal modes is designed to be different for each cavity segment, so that the allowed modes (given by the “mode combs”) of the different cavity segments align only at one particular energetic position. This is the energy (wavelength) at which the laser emission will take place. By changing the drive currents of the cavity segments, the relative positions of the “mode combs” can be shifted and the allowed modes for the different cavity segments brought into alignment at a different wavelength. In this manner, a discrete tuning between a set of wavelengths defined by the lattice structures and the dimensions of the cavity segments is possible. If the spacing between the addressable wavelengths is sufficiently small, any intermediate wavelength can be accessed by a simultaneous change of the drive currents in the cavity segments or by a combined variation of the device temperature and of the drive currents.

Additional cavity sections without a lattice structure can be used as “gain-sections” to provide amplification of the single-mode emission generated by the methods described herein. Since the injected currents into these “gain-sections” are independent of the currents in the cavity segments used to generate single-mode emission, flexible control of the output power of the unipolar single-mode laser can be achieved in this case.

Some embodiments of the invention provide a tuneable unipolar single-mode laser with a lattice structure produced following the conclusion of the epitaxial growth of the laser layer on the semiconductor substrate. By virtue of this subsequent production of cavity segments and lattice structure, it is possible to determine the individual amplification spectrum of the epitaxial unipolar laser structure (“epitaxial structure” in brief) before the production of the lattice structure and cavity segments such that, by selective predefinitions of the parameters of the cavity segment dimensions and lattice structure, it is possible to subsequently produce the desired laser profile in a very precise manner. Thus, one is able to reproducibly manufacture tuneable unipolar single-mode lasers with a precisely defined wavelength or laser mode.

The structural design according to some embodiments of the present invention also facilitates an undisturbed, continuous formation of the laser layer in the epitaxial process so that unnecessary defects, which can impair the power output characteristics of the laser layer or the tunable laser, typically do not arise. The arrangement of the lattice structure at a distance from the active laser layer also helps in preventing the subsequent impairment of the laser layer. As the epitaxial unipolar laser structure is grown without interruption, the manufacturing cost of tuneable lasers can be markedly reduced. The lattice structure modulates periodically the losses or the gain and the refractive power for light propagating through the laser. In this way the tuneable unipolar laser according to some embodiments of the present invention facilitates a complex coupling of the laser radiation with the lattice structure with modulation of the real- and imaginary parts of the refractive index.

To permit a highly precise setting of the distance or relative position between the lattice structure and the active laser layer of the unipolar laser in the production of the tunable unipolar laser, the lattice structure can be arranged on a layer arranged in parallel to the laser layer.

If a metal is used to form the lattice structure, the advantageous effects described in the foregoing can be achieved to a particularly comprehensive extent. Irrespective of the material selected to construct the lattice structure, the lattice structure can also be formed by material removal, not only by material application. In particular, the lattice structure can be formed as an overlying structure (e.g., a metal lattice structure), as well as defined into the upper cladding layer by an etched structure and successive filling of the resulting grooves by other material (e.g., a metal). Important in this context is the close contact between lattice structure and upper metallic electrode for efficient current injection to each of the cavity segments. If a metal is used to define the lattice structure, it is particularly advantageous to use the same metal also for the fabrication of the top contact layer to each section. In particular, a metal layer sequence (e.g., Cr, Pt, Au layers of various thickness) can also be used for this purpose. In order to improve the electrical injection, it proves advantageous for the sides of the waveguide ridge to be arranged substantially at right angles to the plane in which the lattice structure extends.

The typical semiconductor unipolar laser includes opposed front and back surfaces, referred to as front and back facets. These facets are typically obtained by cleaving. In order to control the light output and to direct it as desired, for example preferentially to the front side, it might become necessary to increase the back facet reflectivity. Furthermore in order to realize other properties of the device, e.g., small threshold currents, it may be advisable to also increase the reflectivity at the front surface. The threshold current for laser onset is proportional to exp[2(α_(i)+α_(m))/Γg_(o)], where Γ is the confinement factor, g_(o) is the material gain, α_(i) is the internal absorption and α_(m)=1/L*ln(1/R) are the mirror losses. Therefore the threshold current for any given laser length L can be significantly reduced if the resonator reflectivity R is increased. By increasing the reflectivity, i.e., decreasing the mirror losses α_(m), the length L of the device can be simultaneously reduced without a significant loss of performance as compared to lasers of the same lengths without additional reflectors. By using high facet reflectivities, the slope efficiency, i.e., the output power dependence on the drive current, can also be increased as compared to lasers with cleaved facets using highly reflective mirrors on one or both ends of the ridge.

This increase in reflectivity might, for example, be obtained by defining a Bragg reflector structure adjacent to the laser facet(s). Typically a Bragg reflector structure is realized by applying different dielectric materials of appropriate thickness to the facets. Since many dielectric materials have absorbing properties in the wavelength range of interest, a particularly useful approach for a unipolar laser is the definition of a Bragg reflector using an air-semiconductor mirror structure. These reflectors are arranged perpendicular to the laser ridge at a certain distance from one or both ends. The width of the mirror plates as well as the width of the air gap depend on the emission wavelength of the device. The dimensions of the mirror plates can extend beyond the ridge width dimensions to reduce diffraction losses of the laser light. By such a unipolar laser with Bragg mirrors at one or both end facets, particularly low current densities and high output powers can be achieved. This can be used to increase the upper temperature of laser operation with respect to devices with cleaved facets. The Bragg mirrors can be realized as mirror plates separated by gaps. Alternatively they can also be realised by a two dimensional periodic pattern involving for example air holes. In both cases the change of refractive index can be used to modify the reflectivity compared to cleaved facets. Similar structures can also be used to control the coupling between the unipolar laser segments. However, the Bragg mirrors are optional structures to modify the facet reflectivities which can be omitted if desired.

In a process according to some embodiments of the invention, on a base consisting of a semiconductor substrate, a complete unipolar semiconductor laser structure is produced in an epitaxial process with the subsequent formation of a waveguide ridge. This waveguide ridge is divided into a plurality of cavity sections by subjecting the semiconductor laser structure to a material removal process and the subsequent application of a lattice structure to various cavity sections. Irrespective of the material selected to form the lattice structure, the lattice structure can also be produced by material removal, not only by material application.

A processes according to some embodiments of the invention as briefly described in the foregoing thus facilitates the production of functional lasers in a first process phase, thereby facilitating the precise checking and determination of the electrical and optical properties, for example determination of the individual amplification spectrum of the epitaxial unipolar laser structure used for the laser fabrication. Only thereafter in a second process phase, by the formation of cavity segments and lattice structures with defined parameters, are single-mode tuneable unipolar lasers obtained.

In those embodiments in which the lattice structure is produced by the application of a lattice, the use of a lithographic process, for example by optical or electron beam lithography with subsequent etching of the lattice followed by a metallization, proves particularly advantageous.

A variant of the production process which is particularly advantageous from an economic standpoint is possible if, for the production of a plurality of tuneable unipolar lasers with different properties, a semiconductor laser wafer is first produced by applying an epitaxial structure to a semiconductor substrate, whereupon the waveguide ridges associated with the individual lasers are produced in the composite wafer by forming a waveguide structure which is arranged on the surface of the semiconductor laser wafer and which comprises waveguide ridges extending in parallel to one another. Only thereafter is the semiconductor laser wafer divided up into separate semiconductor laser chip units, whereby properties associated with the individual lasers are then controlled by the application of different cavity segments and corresponding lattice structures to these cavity segments along the surface of the waveguide ridges with corresponding structural parameters on a selected number of lasers.

It is thus possible for the lasers which have been produced on the composite wafer and are already provided with the waveguide ridge to be used as basic lasers or “unfinished” lasers with defined electrical and optical properties whereupon, from this reservoir of identically formed basic lasers, the required number of lasers can then be selected and, by the realization of defined cavity structures and lattice structures, the desired number of tuneable unipolar lasers with precisely defined optical and electrical properties can be produced substantially without rejects.

In the following, the construction of various embodiments of a tuneable unipolar laser according to some embodiments of the invention and a possible process for the production thereof will be explained in detail making reference to the drawings.

The various features of novelty which characterise the invention are pointed out with particularity in the claims annexed to and forming a part of this disclosure. For a better understanding of the invention, its operating advantages and specific objects attained by its uses, reference is made to the accompanying drawings and descriptive matter in which various embodiments of the invention are illustrated.

BRIEF DESCRIPTION OF THE DRAWINGS

The drawings herein are not to scale.

FIG. 1 a is a schematic perspective view of one embodiment of the tunable unipolar laser of the invention in an early stage of fabrication.

FIG. 1 b is a schematic perspective view of the tunable unipolar laser in FIG. 1 a in a subsequent stage of fabrication.

FIG. 1 c is a schematic perspective view of the tunable unipolar laser in FIG. 1 b in a subsequent stage of fabrication.

FIG. 1 d is a schematic perspective view of the tunable unipolar laser in FIG. 1 c in a subsequent stage of fabrication.

FIG. 2 is a schematic perspective view of another embodiment of the tunable unipolar laser including two lattice-free cavity sections. Longitudinal-mode selection in this case is given by the length of the cavity sections.

FIG. 3 is a schematic perspective view of another embodiment of the tunable unipolar laser with a lattice structure defined laterally along the waveguide ridge.

FIG. 4 is a schematic perspective view of another embodiment of the tunable unipolar laser with an air-semiconductor Bragg reflector defined adjacent to one end of the waveguide ridge.

FIG. 5 is a schematic perspective view of another embodiment of the tunable unipolar laser with an additional lattice-free ‘gain-section’.

FIG. 6 is a scanning electron microscope image of the lattice structure arranged atop of the waveguide (compare FIG. 1 c).

FIG. 7 is a scanning electron microscope image of a DBR structure arranged adjacent to the waveguide ridge (compare FIG. 4).

FIG. 8 shows longitudinal mode combs for two different cavity segments and qualitatively illustrates the selection of the laser wavelength.

DETAILED DESCRIPTION

FIGS. 1 a-1 d illustrate typical steps in the fabrication of a tunable unipolar laser 10. Referring to the drawings in particular, FIG. 1 a is a simplified perspective view of an exemplary tunable unipolar laser 10 comprising a semiconducting substrate 11 and an epitaxial structure 12 grown thereon. The epitaxial structure comprises a lower cladding layer 31, a lower guiding layer 32, an active region 33 suitable for lasing in a region of wavelengths around a wavelength λ, an upper guiding layer 34 and an upper cladding layer 35 having an upper surface 16. Semiconducting substrate 11 and epitaxial structure 12 contain doped semiconductor material of only one conductivity type (either only n-type or only p-type). For a wide tuning range of the laser, an active region with an engineered broad spectral gain region is advantageous.

In an exemplary embodiment of the invention, the active region is designed for laser emission at an infrared wavelength λ around 9.5 μm. The active region consisting of a plurality of nominal identical stages for multiple photon generation has a total thickness of 3.2 μm. Layer 32 and layer 34 are GaAs with a thickness of 3.4 μm and doped to 5×10¹⁶ cm⁻³. Layer 31 and layer 35 are GaAs with a thickness of 1.4 μm and doped to 5×10¹⁸ cm⁻³.

FIG. 1 b shows a waveguide laser in which the surface 16 has been subjected to a material removal process, such as for example a dry etching process, in order to obtain the illustrated stepped surface formation with a waveguide ridge 15 extending in the longitudinal direction of the waveguide structure. The aforementioned material removal process gives rise to adjacent surfaces 42, which are formed on both sides of the waveguide ridge 15, and a top surface 41. The top surface 41 will be referred to in the following as carrier surface. Lateral confinement of the laser output signal is achieved by this waveguide ridge 15. The waveguide ridge exhibits a generally parallelepiped geometry with a substantially rectangular cross section and flat surfaces 41 and 42. In the exemplary embodiment of the invention the waveguide ridge is fabricated by optical lithography in combination with a dry etch process with an etch depth of 8.5 μm.

This waveguide ridge 15 is divided into a plurality of cavity segments (in this particular embodiment two: 15_1 and 15_2). These cavity segments can also be separated from each other by a coupling section (compare e.g., the embodiment of the tunable unipolar laser shown in FIG. 2). Commencing from the waveguide ridge structure illustrated in FIG. 1 b, the embodiment of a tuneable laser shown in FIGS. 1 c and 1 d is produced by forming various cavity segments with e.g., metallic lattice structures arranged on the carrier surfaces 41 by subjecting the carrier surface 41 of the waveguide ridge (15_1 and 15_2) to a lithographic process (e.g., by optical or electron beam lithography and a following patterning and metallization process not described in detail here). In the given example this metallization process is also used to define upper metallic electrodes 61_1 and 61_2 to each of the cavity segments (15_1 and 15_2). The lattice structures 51_1 and 51_2 formed along different cavity sections of the waveguide ridge are composed of several lattices with different lattice periods, thereby providing multiple allowed longitudinal optical modes. By changing the amplitudes and periods of the constituent lattices, a flexible control over the spectral position and the magnitude of the dips in the absorption/reflectivity of the lattice can be obtained. In this particular embodiment, the device comprises two sections carrying a lattice structure. In this particular embodiment, the lattice structure is defined atop the waveguide ridge in the upper cladding layer 35 by a dry etch process with an etch depth of approximately 1μ. The lattice structure is subsequently metallized with top contact metals Cr with a thickness of 30 nm, Pt with a thickness of 150 nm and Au with a thickness of 2.5 μm. This process phase results in the tuneable unipolar laser illustrated in FIG. 1 d with the metallic lattice structures 51_1 and 51_2 arranged on the carrier surface 41 above the active region 33. To be able to precisely define the position of the metallic lattice structures 51_1 and 51_2 arranged on top of the waveguide ridge relative to the active region 33, an additional layer (for example in the form of an etch stop layer) can be optionally provided in the epitaxial unipolar laser structure 12. The etching process used in the lithographic definition of the lattice structure will stop at this etch stop layer and thereby define the exact position of the metallic lattice structures 51_1 and 51_2 relative to the active region 33. A metallic electrode 62 coupled to the bottom surface of the semiconducting substrate facilitates current injection through the individual cavity sections of the device.

A particularly useful option for simplifying the fabrication of some embodiments of a unipolar laser is to define the lattice structures before the definition of the waveguide ridge.

FIG. 2 shows a schematic perspective view of another embodiment of the tunable unipolar laser as laser 10. Tunable unipolar laser 100 is similar to laser 10 (compare FIG. 1 b) except that in this case longitudinal mode selection in the cavity segments is not realized by lattice structures. Instead, by the length dimensions of the different cavity sections, the allowed longitudinal modes are determined. In this case the length of the segment is proportional to an integer number of half wavelengths of the electromagnetic radiation.

The coupling between cavities can be realized in various ways. In the simplest case an air gap between the different cavities can be used. This air gap is typically defined by a material removal process. The etch depth of this air gap influences the amount of coupling. In the extreme case of no existing air gap, maximum coupling between different cavity sections is achieved. But also different approaches e.g., based on coupling sections using photonic crystal structures given by two dimensional hole patterns or one dimensional slit patterns in the semiconductor can be used to achieve optimised coupling between different cavities.

A particularly useful approach in this context is to simultaneously define different cavity segments by the same lithographic and material removal process (e.g., etch process) as used for the definition of the waveguide ridge.

FIG. 3 shows a schematic perspective view of another embodiment of the tunable unipolar laser. Tunable unipolar laser 200 is similar to laser 10 (compare FIG. 1 b) except that the lattice structures formed along different cavity sections in this case are defined laterally to the waveguide ridge on surface 42. Compared to laser 10 a different etch depth for optimised coupling is used in this case.

FIG. 4 shows a schematic perspective view of another embodiment of the tunable unipolar laser. Tunable unipolar laser 300 is similar to laser 10 (compare FIG. 1 b) except that an additional Bragg reflector structure 72 is situated adjacent to the waveguide ridge.

Unipolar semiconductor lasers 10 include opposed front and back facets 67 and 68 as shown in FIG. 1 d. More particularly, front and back facets are crystal planes typically obtained by cleaving. Facets 67 and 68 are cleaved or coated facets.

A particularly useful approach for fabricating some embodiments of a unipolar laser is to increase facet reflectivity by the definition of a Bragg reflector using an air-semiconductor mirror structure as shown in FIG. 4 for one laser facet. These reflectors are arranged parallel to the laser facet at a certain distance from the facet. The width of the mirror plates 81 as well as the width of the air gap 82 depend on the emission wavelength of the device. The dimensions of the mirror plates can extend beyond the ridge widths dimensions to reduce diffraction losses of the laser light. A technological approach that is particularly advantageous is to define these mirror reflectors in parallel to the definition of the waveguide ridge (e.g., by a dry etch process). Different combinations of cleaved facets, coated facets as well as Bragg mirror reflectors based on plate/slit or hole structures can be used.

FIG. 5 shows a schematic perspective view of another embodiment of the tunable unipolar laser. Tunable unipolar laser 400 is similar to laser 10 (compare FIG. 1 b) except that an additional lattice-free gain section 71_3 is included.

FIG. 6 shows an electron microscope image of a lattice structure formed atop one of the cavity segments of a two cavity segment laser (before the metallization) as schematically illustrated in FIG. 1 c. The characteristics of the lattice structure are determined by the distance between the lattice ridges, the geometric configuration of the lattice ridges, and the metal used for the subsequent metallization.

FIG. 7 shows an electron microscope image of a Bragg reflector structure adjacent to the end of one of the cavity segments of a two cavity segment laser as schematically illustrated in FIG. 4. The characteristics of the Bragg reflector structure are determined by the distance between the mirror plates, the geometric configuration of the mirror plates and the air gaps.

FIG. 8 contains a schematic illustration of the selection of the laser wavelength for laser 10. Two longitudinal mode combs of different cavity segments of the laser have a different spacing of their allowed modes so they overlap only at one spectral position. The resulting laser spectrum is displayed at the top of FIG. 8. Tuning can be achieved by displacing the two mode combs of the cavity segments relative to each other by a change of the injection currents.

In the given case of laser 10 a two cavity section unipolar tuneable laser has been demonstrated. In the demonstrated example of laser 10, each cavity section carries a lattice structure. However, it is to be understood that the present claims are intended to cover cavities with and without lattice structures in arbitrary combinations.

While specific embodiments of the invention have been shown and described in detail to illustrate the application of the principles of the invention, it will be understood that the invention may be embodied otherwise without departing from such principles. 

1. A method of producing a unipolar semiconductor laser having desired performance characteristics including broad wavelength tuning comprising: a) forming an epitaxial structure by an epitaxial process on a semiconductor substrate wherein said epitaxial structure comprises: a1) a lower cladding layer on said semiconductor substrate; and, a2) a lower guiding layer on said lower cladding layer; and, a3) an active region on said lower guiding layer wherein said active region is suitable for lasing in a range of wavelengths around a given wavelength; and, a4) an upper guiding layer on said active region; and, a5) an upper cladding layer on said upper guiding layer; and wherein said semiconductor substrate and said epitaxial structure comprise doped semiconductor materials of only one conductivity type; and, b) forming a waveguide ridge by removing materials from said epitaxial structure; and, c) measuring the optical and electrical properties of said epitaxial structure on said semiconductor substrate and determining therefrom the nature of subsequent processing steps for producing a tunable unipolar laser having said desired performance characteristics; and, d) forming at least two cavity sections along said waveguide ridge with a coupling section between adjacent cavity sections, wherein the characteristics of said cavity sections and said coupling sections are formed so as to produce desired performance characteristics of said laser; and, e) forming upper electrodes on each of said at least two cavity sections; and f) forming a lower electrode on the bottom surface of said semiconductor substrate.
 2. A method as in claim 1 wherein said waveguide ridge and said at least two cavity sections are formed in a single processing step.
 3. A method of producing a unipolar semiconductor laser having desired performance characteristics including broad wavelength tuning comprising: a) forming an epitaxial structure by an epitaxial process on a semiconductor substrate wherein said epitaxial structure comprises: a1) a lower cladding layer on said semiconductor substrate; and, a2) a lower guiding layer on said lower cladding layer; and, a3) an active region on said lower guiding layer wherein said active region is suitable for lasing in a range of wavelengths around a given wavelength; and, a4) an upper guiding layer on said active region; and, a5) an upper cladding layer on said upper guiding layer; and wherein said semiconductor substrate and said epitaxial structure comprise doped semiconductor materials of only one conductivity type; and, b) forming a waveguide ridge formed by removing materials from said epitaxial structure; and, c) forming at least two cavity sections formed along said waveguide ridge with a coupling section between adjacent cavity sections; and, d) measuring the optical and electrical properties of said epitaxial structure on said semiconductor substrate and determining therefrom the nature of subsequent processing steps for producing a tunable unipolar laser having said desired performance characteristics; and, e) forming one or more lattice structures on one or more of said cavity sections, or adjacent to said cavity sections, or both, wherein the characteristics of said one or more lattice structures are formed so as to produce said desired performance characteristics of said laser; and, f) forming upper electrodes on each of said at least two cavity sections, on said lattice structure when present; and, g) forming a lower electrode on the bottom surface of said semiconductor substrate.
 4. A process for the production of a unipolar semiconductor laser having a broad wavelength tuning range comprising: forming an epitaxial structure by an epitaxial process on a semiconductor substrate by wherein said epitaxial structure comprises: a lower cladding layer on said semiconductor substrate; and, a lower guiding layer on said lower cladding layer; and, an active region on said lower guiding layer wherein said active region is suitable for lasing in a range of wavelengths around a given wavelength; and, an upper guiding layer on said active region; and, an upper cladding layer on said upper guiding layer; and wherein said semiconductor substrate and said epitaxial structure comprise doped semiconductor materials of only one conductivity type; and, forming a waveguide ridge by removing materials from said epitaxial structure thereby forming adjacent surfaces on either side of said waveguide ridge; and, forming at least two cavity sections along said waveguide ridge; and, forming a lattice structure on, or adjacent to, at least one of said cavity sections; and, forming upper electrodes on each of said at least two cavity sections, on said lattice structure when present; and, forming an electrode on the bottom surface of said semiconductor substrate.
 5. A process as in claim 4 wherein forming said waveguide ridge and forming said at least two cavity sections are performed in a single material removal processing step.
 6. A process as in claim 4 further comprising: forming an air-semiconductor mirror adjacent to at least one of the facets of said unipolar semiconductor laser.
 7. A process as in claim 4 wherein forming said waveguide ridge and forming said air-semiconductor mirror are performed in a single material removal processing step.
 8. A process as in claim 4 wherein forming said one or more lattice structures comprises material removal in the pattern desired for said one or more lattice structures followed by metallization.
 9. A process as in claim 8 wherein said metallization comprises deposition of at least two metal layers, wherein each of said metal layers is Cr, Pt, Au, mixtures or alloys thereof.
 10. A method of producing a plurality of unipolar semiconductor lasers having desired performance characteristics including broad wavelength tuning comprising: a) forming an epitaxial structure by an epitaxial process on a semiconductor wafer substrate wherein said epitaxial structure comprises: a1) a lower cladding layer on said semiconductor wafer substrate; and, a2) a lower guiding layer on said lower cladding layer; and, a3) an active region on said lower guiding layer wherein said active region is suitable for lasing in a range of wavelengths around a given wavelength; and, a4) an upper guiding layer on said active region; and, a5) an upper cladding layer on said upper guiding layer; and, wherein said semiconductor wafer substrate and said epitaxial structure comprise doped semiconductor materials of only one conductivity type; and b) forming a plurality of waveguide ridges by removing materials from said epitaxial structure; and, c) dividing said semiconductor wafer substrate into a plurality of separate semiconductor substrates, each of said separate semiconductor substrates having an epitaxial structure thereon suitable for producing an unipolar semiconductor laser; and, d) forming at least two cavity sections along each of said waveguide ridges with a coupling section between adjacent cavity sections, wherein the characteristics of said cavity sections and said coupling sections are formed so as to produce said desired performance characteristics for said laser; and, e) forming upper electrodes on each of said at least two cavity sections on each of said semiconductor substrates; and f) forming a lower electrode on the bottom surface of each of said semiconductor substrates.
 11. A method of producing a plurality of unipolar semiconductor lasers having desired performance characteristics including broad wavelength tuning comprising: a) forming an epitaxial structure by an epitaxial process on a semiconductor wafer substrate wherein said epitaxial structure comprises: a1) a lower cladding layer on said semiconductor wafer substrate; and, a2) a lower guiding layer on said lower cladding layer; and, a3) an active region on said lower guiding layer wherein said active region is suitable for lasing in a range of wavelengths around a given wavelength; and, a4) an upper guiding layer on said active region; and, a5) an upper cladding layer on said upper guiding layer; and, wherein said semiconductor wafer substrate and said epitaxial structure comprise doped semiconductor materials of only one conductivity type; and b) forming a plurality of waveguide ridges by removing materials from said epitaxial structure; and, c) dividing said semiconductor wafer substrate into a plurality of separate semiconductor substrates, each of said separate semiconductor substrates having an epitaxial structure thereon suitable for producing an unipolar semiconductor laser; and, d) forming at least two cavity sections along each of said waveguide ridges with a coupling section between adjacent cavity sections, wherein the characteristics of said cavity sections and said coupling sections are formed so as to produce said desired performance characteristics for said laser; and, e) forming one or more lattice structures on at least one of said cavity sections, or adjacent to said cavity sections, or both, wherein the characteristics of said one or more lattice structures are formed so as to produce said desired performance characteristics of said laser; and, f) forming upper electrodes on each of said at least two cavity sections on each of said semiconductor substrates; and g) forming a lower electrode on the bottom surface of each of said semiconductor substrates.
 12. A method of producing a plurality of unipolar semiconductor lasers having desired performance characteristics including broad wavelength tuning comprising: a) forming an epitaxial structure by an epitaxial process on a semiconductor wafer substrate wherein said epitaxial structure comprises: a1) a lower cladding layer on said semiconductor wafer substrate; and, a2) a lower guiding layer on said lower cladding layer; and, a3) an active region on said lower guiding layer wherein said active region is suitable for lasing in a range of wavelengths around a given wavelength; and, a4) an upper guiding layer on said active region; and, a5) an upper cladding layer on said upper guiding layer; and, wherein said semiconductor wafer substrate and said epitaxial structure comprise doped semiconductor materials of only one conductivity type; and b) forming a plurality of waveguide ridges by removing material from said epitaxial structure; and, c) dividing said semiconductor wafer substrate into a plurality of separate semiconductor substrates, each of said separate semiconductor substrates having an epitaxial structure thereon suitable for producing an unipolar semiconductor laser; and d) measuring the optical and electrical properties of said epitaxial structure based on one of said separate semiconductor substrates and determining therefrom the nature of subsequent processing steps for producing a tunable unipolar laser having said desired performance characteristics; and, e) forming at least two cavity sections along each of said waveguide ridges with a coupling section between adjacent cavity sections, wherein the characteristics of said cavity sections and said coupling sections are formed so as to produce said desired performance characteristics for said laser; and, f) forming upper electrodes on each of said at least two cavity sections on each of said semiconductor substrates; and g) forming a lower electrode on the bottom surface of each of said semiconductor substrates.
 13. A method of producing a plurality of unipolar semiconductor lasers having desired performance characteristics including broad wavelength tuning comprising: a) forming an epitaxial structure by an epitaxial process on a semiconductor wafer substrate wherein said epitaxial structure comprises: a1) a lower cladding layer on said semiconductor wafer substrate; and, a2) a lower guiding layer on said lower cladding layer; and, a3) an active region on said lower guiding layer wherein said active region is suitable for lasing in a range of wavelengths around a given wavelength; and, a4) an upper guiding layer on said active region; and, a5) an upper cladding layer on said upper guiding layer; and, wherein said semiconductor wafer substrate and said epitaxial structure comprise doped semiconductor materials of only one conductivity type; and b) forming a plurality of waveguide ridges by removing materials from said epitaxial structure; and, c) dividing said semiconductor wafer substrate into a plurality of separate semiconductor substrates, each of said separate semiconductor substrates having an epitaxial structure thereon suitable for producing an unipolar semiconductor laser; and, d) measuring the optical and electrical properties of said epitaxial structure based on one of said separate semiconductor substrates and determining therefrom the nature of subsequent processing steps for producing a tunable unipolar laser having said desired performance characteristics; and, e) forming at least two cavity sections along each of said waveguide ridges with a coupling section between adjacent cavity sections comprising each of said waveguide ridges, wherein the characteristics of said cavity sections and said coupling sections are formed so as to produce said desired performance characteristics for said laser; and, f) forming one or more lattice structures on at least one of said cavity sections, or adjacent to said cavity sections, or both, wherein the characteristics of said one or more lattice structures are formed so as to produce said desired performance characteristics of said laser; and, g) forming upper electrodes on each of said at least two cavity sections on each of said semiconductor substrates; and h) forming a lower electrode on the bottom surface of each of said semiconductor substrates. 